i c , nom 300 a i c 480 a min. typ. max. - 1,7 2,15 v - 2,0 - v na i ges gate emitter leakage current v ce = 1200v, v ge = 0v, t vj = 25c i ces reverse transfer capacitance rckwirkungskapazit?t 5 - - 400 gateladung v ge = -15v...+15v collector emitter cut off current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c gate charge eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v kollektor emitter reststrom k a2s kv 6,50 v f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v ma - c nf nf c res - 0,85 - 600 i frm i c = 300a, v ge = 15v, t vj = 125c q g 19 - 2,80 2,5 300 a grenzlastintegral gate threshold voltage v ge(th) i2t value i2t isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. dc forward current gate emitter peak voltage t c = 25c, transistor i f 600 +/- 20 w a 1470 v - a i crm p tot v isol gate schwellenspannung i c = 12ma, v ce = v ge , t vj = 25c dc collector current repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom dauergleichstrom t p = 1ms h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom collector emitter voltage t vj = 25c v elektrische eigenschaften / electrical properties t c = 25c transistor wechselrichter / transistor inverter date of publication: 2002-10-02 kollektor emitter s?ttigungsspannung i c = 300a, v ge = 15v, t vj = 25c collector emitter saturation voltage v ces repetitive peak forward current v r = 0v, t p = 10ms, t vj = 125c periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; wilhelm rusche technische information / technical information FD300R12KE3 igbt-module igbt-modules - - v ges 5,0 5,80 21 c ies - 1200 prepared by: mod-d2; mark mnzer revision: 3.0 1 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,18 - s - 1,65 2,15 v - 1,65 - v - 210 - a - 270 - a - 30 - c - 56 - c - 14 - mj - 26 - mj sperrverz?gerungsladung recovered charge 20 0,7 - - fallzeit (induktive last) fall time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c i c = 300a, v cc = 600v 1200 - a - mj - mj v ge = 15v, r g = 2,4 ? , t vj = 25c i c = 300a, v cc = 600v v ge = 15v, r g = 2,4 ? , t vj = 25c v cc = 900v, v cemax = v ces - l ce di/dt einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls v ge = 15v, r g = 2,4 ? , t vj = 125c kurzschlussverhalten t p 10s, v ge 15v, t vj 125c turn off energy loss per pulse sc data - nh stray inductance module modulinduktivit?t l ce - e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 300a, -di f /dt= 3000a/s v r = 600v, v ge = -15v, t vj = 125c q r v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c leitungswiderstand, anschluss-chip i f = 300a, -di f /dt= 3000a/s rckstromspitze peak reverse recovery current inversdiode / free-wheel diode v r = 600v, v ge = -15v, t vj = 25c i f = 300a, -di f /dt= 3000a/s durchlassspannung i f = 300a, v ge = 0v, t vj = 125c lead resistance, terminal-chip r cc/ee t c = 25c v f forward voltage m ? charakteristische werte / characteristic values t d,off - t f v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c - e on i c = 300a, v cc = 600v, l = 80nh v ge = 15v, r g = 2,4 ? , t vj = 125c e off i c = 300a, v cc = 600v, l = 80nh 25 - 44 einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 2,4 ? , t vj = 125c transistor wechselrichter / transistor inverter v ge = 15v, r g = 2,4 ? , t vj = 125c i c = 300a, v cc = 600v ausschaltenergie pro puls reverse recovery energy abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 300a, v cc = 600v t r i rm charakteristische werte / characteristic values i sc i f = 300a, v ge = 0v, t vj = 25c 2 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules - 1,65 2,1 v - 1,65 - v - 280 - a - 360 - a - 40 - c - 75 - c - 18 - mj - 34 - mj - - 0,085 k/w - - 0,150 k/w - - 0,125 k/w ausschaltenergie pro puls reverse recovery energy i f =400a, -di f /dt= 4000a/s innerer w?rmewiderstand; dc thermal resistance, junction to case; dc chopper diode / chopper diode e rec v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c rckstromspitze peak reverse recovery current i f =400a, -di f /dt= 4000a/s i rm v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c sperrverz?gerungsladung recovered charge i f =400a, -di f /dt= 4000a/s chopperdiode / chopper diode durchlassspannung i f =400a, v ge = 0v, t vj = 25c v f forward voltage i f = 400a, v ge = 0v, t vj = 125c mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innere isolation case, see appendix 2,5 - 425 q r v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c transistor wechelr. / transistor inverter inversdiode / free wheel diode r thjc 6,0 g weight g gewicht 3,0 340 m mounting torque cti anzugsdrehmoment, mech. befestigung schraube m6 / screw m6 comperative tracking index internal insulation geh?use, siehe anlage c maximum junction temperature betriebstemperatur -40 - 125 c 150 - 0,010 - nm c -40 - 125 - al 2 o 3 k/w t vj max lagertemperatur storage temperature operation temperature mechanische eigenschaften / mechanical properties t vj op t stg thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. - bergangs w?rmewiderstand pro modul / per module paste = 1w/m*k / grease = 1w/m*k - thermische eigenschaften / thermal properties r thck charakteristische werte / characteristic values anzugsdrehmoment, elektr. anschlsse mnm terminal connection torque 5,0 anschlsse / terminals m6 3 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 100 200 300 400 500 600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 0 100 200 300 400 500 600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 4 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20v durchlasskennlinie der dioden (typisch) i f = f(v f ) forward caracteristic of diodes (typical) 0 100 200 300 400 500 600 5678910111213 v ge [v] i c [a] tvj=25c tvj=125c 0 75 150 225 300 375 450 525 600 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] of inverse diode 0 100 200 300 400 500 600 700 800 tvj = 25c tvj = 125c i f [a] of chopper diode 5 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g =2,4 ? , v ce =600v, t vj =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =300a, v ce =600v, t vj =125c 0 10 20 30 40 50 60 70 80 90 0 100 200 300 400 500 600 i c [a] e [mj] eon eoff erec 0 20 40 60 80 100 120 140 160 180 0 4 8 1216202428 r g [ ? ] e [mj] eon eoff erec 6 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules transienter w?rmewiderstand transient thermal impedance z thjc = f (t) sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, t vj =125c, r g =2,4 ? 1,187e-05 2,83 1,187e-05 2,37 1,187e-05 i [s] : igbt 6,499e-02 4 r i [k/kw] : igbt 35,73 42,82 4,84 1,61 i 123 2,601e-02 2,364e-03 r i [k/kw] : inversdiode 62,99 75,66 8,52 i [s] : inversdiode 6,499e-02 2,601e-02 2,364e-03 r i [k/kw] : chopper diode 52,51 63,02 7,10 i [s] : chopper diode 6,499e-02 2,601e-02 2,364e-03 0,001 0,01 0,1 1 0,001 0,01 0,1 1 t [s] z thjc [k/w] zth : igbt zth : inversdiode zth : diode chopper 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
technische information / technical information FD300R12KE3 igbt-module igbt-modules 11 mm clearance distance luftstrecke 20 mm creepage distance kriechstrecke geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_FD300R12KE3_3.0 2002-10-02 www.datasheet.co.kr datasheet pdf - http://www..net/
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